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Ferroelectricity enables key modern technologies from non-volatile memory to precision ultrasound. The first known wurtzite ferroelectric Al 1− x Sc x N has recently attracted attention because of its robust ferroelectricity and Si process compatibility, but the chemical and structural origins of ferroelectricity in wurtzite materials are not yet fully understood. Here we show that ferroelectric behavior in wurtzite nitrides has local chemical rather than extended structural origin. According to our coupled experimental and computational results, the local bond ionicity and ionic displacement, rather than simply the change in the lattice parameter of the wurtzite structure, is key to controlling the macroscopic ferroelectric response in these materials. Across gradients in composition and thickness of 0 < x < 0.35 and 140–260 nm, respectively, in combinatorial thin films of Al 1− x Sc x N, the pure wurtzite phase exhibits a similar c / a ratio regardless of the Sc content due to elastic interaction with neighboring crystals. The coercive field and spontaneous polarization significantly decrease with increasing Sc content despite this invariant c / a ratio. This property change is due to the more ionic bonding nature of Sc–N relative to the more covalent Al–N bonds, and the local displacement of the neighboring Al atoms caused by Sc substitution, according to DFT calculations. Based on these insights, ionicity engineering is introduced as an approach to reduce coercive field of Al 1− x Sc x N for memory and other applications and to control ferroelectric properties in other wurtzites. 

Radical reduction of III–V device costs requires a multifaceted approach attacking both growth and substrate costs. Implementing device removal and substrate reuse provides an opportunity for substrate cost reduction. Controlled spalling allows removal of thin devices from the expensive substrate; however, the fracture‐based process currently generates surfaces with significant morphological changes compared to polished wafers. 49 single junction devices are fabricated across the spalled surface of full 50 mm germanium wafers without chemo‐mechanical polishing before epitaxial growth. Device defects are identified and related to morphological spalling defects—arrest lines, gull wings, and river lines—and their impact on cell performance using physical and functional characterization techniques. River line defects have the most consistent and detrimental effect on cell performance. Devices achieve a single junction efficiency above 23% and open‐circuit voltage of 1.01 V, demonstrating that spalled germanium does not need to be returned to a pristine, polished state to achieve high‐quality device performance.

 

Many technologically critical materials are metastable under ambient conditions, yet the understanding of how to rationally design and guide the synthesis of these materials is limited. This work presents an integrated approach that targets a metastable lead‐free piezoelectric polymorph of SrHfO₃. First‐principles calculations predict that the previous experimentally unrealized, metastable P4mmphase of SrHfO₃should exhibit a direct piezoelectric response (d₃₃) of 36.9 pC N⁻¹(compared tod₃₃= 0 for the ground state). Combining computationally optimized substrate selection and synthesis conditions lead to the epitaxial stabilization of the polar P4mmphase of SrHfO₃on SrTiO₃. The films are structurally consistent with the theory predictions. A ferroelectric‐induced large signal effective converse piezoelectric response of 5.2 pm V⁻¹for a 35 nm film is observed, indicating the ability to predict and target multifunctionality. This illustrates a coupled theory‐experimental approach to the discovery and realization of new multifunctional polymorphs.